AlSb/InAs HEMT's for low-voltage, high-speed applications

نویسندگان
چکیده

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

High Efficient 3-input XOR for Low-Voltage Low-Power High- Speed Applications

A new 3-Input XOR gate based upon the pass transistor design methodology for lowvoltage, low-voltage high-speed applications is proposed. Five existed circuits are compared with the new proposed gate. It is shown that the proposed new circuit has at least 50% improvement in power-delay product than the CPL structure and than the CMOS structure. Moreover, the proposed new circuit could also be o...

متن کامل

A High Efficiency Low-Voltage Soft Switching DC–DC Converter for Portable Applications

This paper presents a novel control method to improve the efficiency of low-voltage DC-DC converters at light loads. Pulse Width Modulation (PWM) converters have poor efficiencies at light loads, while pulse frequency modulation (PFM) control is more efficient for the same cases. Switching losses constitute a major portion of the total power loss at light loads. To decrease the switching losses...

متن کامل

Digital Ultra Low Voltage High Speed Logic

Low power is becoming more and more crucial and in many aspects becoming the number 1 priority when designing new applications. Ultra low voltage CMOS is an approach for producing very low-power CMOS circuits by reducing the supply voltage to several hundred millivolts [1, 2]. To maintain good performance at low supply voltages, the threshold voltages of MOS transistors must also be reduced [3–...

متن کامل

Phase Frequency Detector Using Transmission Gates for High Speed Applications

In this paper a new phase-frequency detector is proposed using transmission gates which can detect phase difference less than 500ps. In other word, the proposed Phase-frequency Detector (PFD) can work in frequencies higher than 1.7 GHz, whereas a conventional PFD operates at frequencies less than 1.1 GHz. This new architecture is designed in TSMC 0.13um CMOS Technology. Also, the proposed PFD a...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: IEEE Transactions on Electron Devices

سال: 1998

ISSN: 0018-9383

DOI: 10.1109/16.711349